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| INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRF630A DESCRIPTION *Drain Current -ID=9A@ TC=25 *Drain Source Voltage: VDSS= 200V(Min) *Static Drain-Source On-Resistance : RDS(on) = 0.4(Max) *Fast Switching Speed *Low Drive Requirement APPLICATIONS *This device is n-channel, enhancement mode, power MOSFET designed especially for high power, high speed applications, such as switching power supplies,UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VDSS VGS ID Ptot Tj Tstg ARAMETER Drain-Source Voltage (VGS=0) Gate-Source Voltage Drain Current-continuous@ TC=25 Total Dissipation@TC=25 Max. Operating Junction Temperature Storage Temperature Range w ww scs .i VALUE 200 30 9 72 150 -55~150 .cn mi e UNIT V V A W THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient MAX 1.74 62.5 UNIT /W /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc N-Channel Mosfet Transistor *ELECTRICAL CHARACTERISTICS (TC=25) SYMBOL V(BR)DSS VGS(TH) RDS(ON) IGSS IDSS VSD PARAMETER Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-stage Resistance Gate Source Leakage Current Zero Gate Voltage Drain Current Diode Forward Voltage CONDITIONS VGS= 0; ID= 0.25mA VDS= VGS; ID= 0.25mA VGS= 10V; ID= 4.5A VGS= 30V;VDS= 0 VDS= 200V; VGS= 0 IF=9A; VGS= 0 MIN 200 2 IRF630A MAX UNIT V 4 0.4 100 10 1.5 V nA uA V w w scs .i w .cn mi e isc Websitewww.iscsemi.cn |
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